All MOSFET. WSD3067DN56 Datasheet

 

WSD3067DN56 Datasheet and Replacement


   Type Designator: WSD3067DN56
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 18.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN5X6C-8
 

 WSD3067DN56 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WSD3067DN56 Datasheet (PDF)

 ..1. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3067DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

 8.1. Size:625K  winsok
wsd3066dn.pdf pdf_icon

WSD3067DN56

WSD3066DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous

 8.2. Size:3084K  winsok
wsd3069dn56.pdf pdf_icon

WSD3067DN56

WSD3069DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A30V 15mgate charge for most of the synchronous buck converter applications . -30V 15m -16AThe WSD3069DN56 meet the RoHS and Green Applic

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3067DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

Datasheet: WSD3023DN56 , WSD3028DN , WSD3030DN , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , IRFZ48N , WSD3069DN56 , WSD3070DN , WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN .

History: SSF7509B | WMS04P10TS | SIHD4N80E | WNM2020 | NCE40H20A | 2N6659-2 | NTTFS020N06C

Keywords - WSD3067DN56 MOSFET datasheet

 WSD3067DN56 cross reference
 WSD3067DN56 equivalent finder
 WSD3067DN56 lookup
 WSD3067DN56 substitution
 WSD3067DN56 replacement

 

 
Back to Top

 


 
.