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WSD3069DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD3069DN56
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 7.1 nC
   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
   Paquete / Cubierta: DFN5X6C-8
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WSD3069DN56 Datasheet (PDF)

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WSD3069DN56

WSD3069DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A30V 15mgate charge for most of the synchronous buck converter applications . -30V 15m -16AThe WSD3069DN56 meet the RoHS and Green Applic

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WSD3069DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

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WSD3069DN56

WSD3066DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous

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wsd30l20dn.pdf pdf_icon

WSD3069DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6800SM | BLM05N03-D

 

 
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