WSD3069DN56 PDF and Equivalents Search

 

WSD3069DN56 Specs and Replacement

Type Designator: WSD3069DN56

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: DFN5X6C-8

WSD3069DN56 substitution

- MOSFET ⓘ Cross-Reference Search

 

WSD3069DN56 datasheet

 ..1. Size:3084K  winsok
wsd3069dn56.pdf pdf_icon

WSD3069DN56

WSD3069DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A 30V 15m gate charge for most of the synchronous buck converter applications . -30V 15m -16A The WSD3069DN56 meet the RoHS and Green Applic... See More ⇒

 8.1. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3069DN56

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application... See More ⇒

 8.2. Size:625K  winsok
wsd3066dn.pdf pdf_icon

WSD3069DN56

WSD3066DN N-Ch MOSFET General Description Product Summery The WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous ... See More ⇒

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3069DN56

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast ... See More ⇒

Detailed specifications: WSD3028DN, WSD3030DN, WSD3042DN56, WSD3045DN, WSD3050DN, WSD3056DN, WSD3066DN, WSD3067DN56, IRF1405, WSD3070DN, WSD3075DN56, WSD3095DN56, WSD30L120DN56, WSD30L20DN, WSD30L30DN, WSD30L40DN, WSD30L60DN56

Keywords - WSD3069DN56 MOSFET specs

 WSD3069DN56 cross reference

 WSD3069DN56 equivalent finder

 WSD3069DN56 pdf lookup

 WSD3069DN56 substitution

 WSD3069DN56 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.