WSG02P06 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WSG02P06 datasheet

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WSG02P06 P-Ch MOSFET General Description Product Summery This P-Channel enhancement mode power BVDSS RDSON ID FETs are produced with high cell density, DMOS trench technology, which is especially used to -60V 215m -2A minimize on-state resistance. This device is particularly suited for low voltage application Applications such as portable equipment, power management and o

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wsg02n20.pdf pdf_icon

WSG02N20 N-Ch MOSFET General Description Product Summery The WSG02N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge 2A 200V 310m for most of the small power switching and load switch applications. Applications The WSG02N20 meet the RoHS and Green Product requirement with full fu

Otros transistores... WSF60100 , WSF6012 , WSF60N06 , WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , 2N60 , WSG03N10 , WSK140N08 , WSK180N04 , WSK200N08A , WSK220N04 , WSP05N15 , WSP06N10 , WSP08N10 .