All MOSFET. WSG02P06 Datasheet

 

WSG02P06 Datasheet and Replacement


   Type Designator: WSG02P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm
   Package: SOT223
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WSG02P06 Datasheet (PDF)

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WSG02P06

WSG02P06P-Ch MOSFETGeneral Description Product SummeryThis P-Channel enhancement mode power BVDSS RDSON ID FETs are produced with high cell density, DMOS trench technology, which is especially used to -60V 215m -2Aminimize on-state resistance. This device is particularly suited for low voltage application Applications such as portable equipment, power management and o

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WSG02P06

WSG02N20 N-Ch MOSFETGeneral Description Product SummeryThe WSG02N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge 2A200V 310mfor most of the small power switching and load switch applications. Applications The WSG02N20 meet the RoHS and Green Product requirement with full fu

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History: SVGP20110NS | WMB014N04LG4 | SM7580NSF | F5038H | IXFB72N55Q2 | ME4947-G | HUFA75545P3

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