WSG02P06 MOSFET Datasheet: P-Ch, 60V, 2A. Full specification with pinout and replacement list

WSG02P06 Specs and Replacement

Type Designator: WSG02P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.215 Ohm

Package: SOT223

WSG02P06 substitution

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WSG02P06 datasheet

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WSG02P06 P-Ch MOSFET General Description Product Summery This P-Channel enhancement mode power BVDSS RDSON ID FETs are produced with high cell density, DMOS trench technology, which is especially used to -60V 215m -2A minimize on-state resistance. This device is particularly suited for low voltage application Applications such as portable equipment, power management and o... See More ⇒

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WSG02N20 N-Ch MOSFET General Description Product Summery The WSG02N20 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge 2A 200V 310m for most of the small power switching and load switch applications. Applications The WSG02N20 meet the RoHS and Green Product requirement with full fu... See More ⇒

Detailed specifications: WSF60100, WSF6012, WSF60N06, WSF70N10, WSF70P03, WSF80N06H, WSF90P03, WSG02N20, 2N60, WSG03N10, WSK140N08, WSK180N04, WSK200N08A, WSK220N04, WSP05N15, WSP06N10, WSP08N10