WSP4812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSP4812
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 8.2 nS
Conductancia de drenaje-sustrato (Cd): 95 pF
Resistencia entre drenaje y fuente RDS(on): 0.026 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET WSP4812
WSP4812 Datasheet (PDF)
wsp4812.pdf
WSP4812Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4812 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Application The WSP4812 meet the RoHS and High Frequency Point-of-Load Synchronou
wsp4805.pdf
WSP4805 Dual P-Ch MOSFETGeneral Description Product SummeryThe WSP4805 is the highest performance BVDSS RDSON ID trench Dual P-Ch MOSFET with extreme high cell density , which provide excellent -30V 16m -8.0ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4805 meet the RoHS and Green Product requirement , 100% EAS
wsp4882.pdf
WSP4882Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4882 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4882 meet the RoHS and Green High Frequency Point-of-Load Synch
wsp4807.pdf
WSP4807 Dual P-Ch MOSFETFeatures SOP-8 Pin Configuration -30V/-8.9A,RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=32m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Available(8) (7) (6) (5)D2 D2D1 D1(RoHS Compliant)Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.S1 S2(1) (3) P-Channe
wsp4888.pdf
WSP4888Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4888 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 13.5m 9.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4888 meet the RoHS and Green High Frequency Point-of-Load Synch
wsp4886.pdf
WSP4886Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4886 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 18m 30V 8.5A density , which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .Applicatio The WSP4886 meet the RoHS and Green High Frequency Point-of-Load Sync
wsp4800.pdf
WSP4800Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book.Green Produ
wsp4884.pdf
WSP4884Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4884 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 18.5m 30V 8.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4884 meet the RoHS and Green High Frequency Point-of-Load Syn
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