WSP4812 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WSP4812
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8.2 ns
Cossⓘ - Выходная емкость: 95 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: SOP8
WSP4812 Datasheet (PDF)
wsp4812.pdf
WSP4812Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4812 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Application The WSP4812 meet the RoHS and High Frequency Point-of-Load Synchronou
wsp4805.pdf
WSP4805 Dual P-Ch MOSFETGeneral Description Product SummeryThe WSP4805 is the highest performance BVDSS RDSON ID trench Dual P-Ch MOSFET with extreme high cell density , which provide excellent -30V 16m -8.0ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4805 meet the RoHS and Green Product requirement , 100% EAS
wsp4882.pdf
WSP4882Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4882 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4882 meet the RoHS and Green High Frequency Point-of-Load Synch
wsp4807.pdf
WSP4807 Dual P-Ch MOSFETFeatures SOP-8 Pin Configuration -30V/-8.9A,RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=32m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Available(8) (7) (6) (5)D2 D2D1 D1(RoHS Compliant)Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.S1 S2(1) (3) P-Channe
wsp4888.pdf
WSP4888Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4888 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 13.5m 9.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4888 meet the RoHS and Green High Frequency Point-of-Load Synch
wsp4886.pdf
WSP4886Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4886 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 18m 30V 8.5A density , which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .Applicatio The WSP4886 meet the RoHS and Green High Frequency Point-of-Load Sync
wsp4800.pdf
WSP4800Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book.Green Produ
wsp4884.pdf
WSP4884Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4884 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 18.5m 30V 8.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4884 meet the RoHS and Green High Frequency Point-of-Load Syn
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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