WSP4812
MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP4812
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 8.2
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
SOP8
WSP4812
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP4812
Datasheet (PDF)
..1. Size:1599K winsok
wsp4812.pdf 
WSP4812Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4812 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Application The WSP4812 meet the RoHS and High Frequency Point-of-Load Synchronou
9.1. Size:625K winsok
wsp4805.pdf
WSP4805 Dual P-Ch MOSFETGeneral Description Product SummeryThe WSP4805 is the highest performance BVDSS RDSON ID trench Dual P-Ch MOSFET with extreme high cell density , which provide excellent -30V 16m -8.0ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4805 meet the RoHS and Green Product requirement , 100% EAS
9.2. Size:1004K winsok
wsp4882.pdf
WSP4882Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4882 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 20m 30V 8.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4882 meet the RoHS and Green High Frequency Point-of-Load Synch
9.3. Size:1290K winsok
wsp4807.pdf
WSP4807 Dual P-Ch MOSFETFeatures SOP-8 Pin Configuration -30V/-8.9A,RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=32m (max.) @ VGS=-4.5V Reliable and Rugged Lead Free and Green Devices Available(8) (7) (6) (5)D2 D2D1 D1(RoHS Compliant)Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.S1 S2(1) (3) P-Channe
9.4. Size:1272K winsok
wsp4888.pdf
WSP4888Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4888 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 13.5m 9.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4888 meet the RoHS and Green High Frequency Point-of-Load Synch
9.5. Size:1208K winsok
wsp4886.pdf
WSP4886Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4886 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell 18m 30V 8.5A density , which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .Applicatio The WSP4886 meet the RoHS and Green High Frequency Point-of-Load Sync
9.6. Size:2550K winsok
wsp4800.pdf
WSP4800Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book.Green Produ
9.7. Size:704K winsok
wsp4884.pdf
WSP4884Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4884 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 18.5m 30V 8.8A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4884 meet the RoHS and Green High Frequency Point-of-Load Syn
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