FCA16N60N Todos los transistores

 

FCA16N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCA16N60N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 134.4 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 40.2 nC

Resistencia drenaje-fuente RDS(on): 0.199 Ohm

Empaquetado / Estuche: TO3PN

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FCA16N60N Datasheet (PDF)

1.1. fca16n60n.pdf Size:518K _fairchild_semi

FCA16N60N
FCA16N60N

August 2009 SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170? Features Description RDS(on) = 0.17? ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. By utilizing th

2.1. fca16n60 fca16n60 f109.pdf Size:987K _upd-mosfet

FCA16N60N
FCA16N60N

December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

 

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