FCA16N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCA16N60N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 134.4 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 40.2 nC
Resistencia drenaje-fuente RDS(on): 0.199 Ohm
Empaquetado / Estuche: TO3PN
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FCA16N60N Datasheet (PDF)
0.1. fca16n60n.pdf 
Size:518K _fairchild_semi
August 2009SupreMOSTMFCA16N60N N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedtechnologies. By
6.1. fca16n60 fca16n60 f109.pdf Size:987K _fairchild_semi
December 2008 TMSuperFETFCA16N60 / FCA16N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor
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