FCA16N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCA16N60N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 134.4 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 40.2 nC
Resistencia drenaje-fuente RDS(on): 0.199 Ohm
Empaquetado / Estuche: TO3PN
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FCA16N60N Datasheet (PDF)
1.1. fca16n60n.pdf 
Size:518K _fairchild_semi
August 2009 SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170? Features Description RDS(on) = 0.17? ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. By utilizing th
2.1. fca16n60 fca16n60 f109.pdf Size:987K _upd-mosfet
December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor
Otros transistores... 2N7002KW , 2N7002MTF , 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , IRF630A , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF .
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