All MOSFET. FCA16N60N Datasheet

 

FCA16N60N MOSFET. Datasheet pdf. Equivalent

Type Designator: FCA16N60N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 134.4 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40.2 nC

Maximum Drain-Source On-State Resistance (Rds): 0.199 Ohm

Package: TO3PN

FCA16N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FCA16N60N Datasheet (PDF)

1.1. fca16n60n.pdf Size:518K _fairchild_semi

FCA16N60N
FCA16N60N

August 2009 SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170? Features Description RDS(on) = 0.17? ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. By utilizing th

2.1. fca16n60 fca16n60 f109.pdf Size:987K _upd-mosfet

FCA16N60N
FCA16N60N

December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

 

Datasheet: 2N7002KW , 2N7002MTF , 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , IRF630A , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF .

 
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