FCA35N60 Todos los transistores

 

FCA35N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCA35N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 312.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm

Encapsulados: TO3PN

 Búsqueda de reemplazo de FCA35N60 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FCA35N60 datasheet

 ..1. Size:764K  fairchild semi
 fca35n60.pdf pdf_icon

FCA35N60

March 2009 SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild s proprietary, new generation of high 650V @ TJ = 150 C voltage MOSFET family that is utilizing an advanced charge bal- Typ.RDS(on) = 0.079 ance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.

 ..2. Size:1531K  onsemi
 fca35n60.pdf pdf_icon

FCA35N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , IRF730 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C .

 

 

 


 
↑ Back to Top
.