All MOSFET. FCA35N60 Datasheet

 

FCA35N60 Datasheet and Replacement


   Type Designator: FCA35N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 139 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO3PN
 

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FCA35N60 Datasheet (PDF)

 ..1. Size:764K  fairchild semi
 fca35n60.pdf pdf_icon

FCA35N60

March 2009SuperFETTMFCA35N60600V N-Channel MOSFET Features DescriptionSuperFETTM is Farichilds proprietary, new generation of high 650V @ TJ = 150Cvoltage MOSFET family that is utilizing an advanced charge bal- Typ.RDS(on) = 0.079 ance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.

 ..2. Size:1531K  onsemi
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FCA35N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , MDF11N65B , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C .

History: 2N6764JTXV | FDB8441

Keywords - FCA35N60 MOSFET datasheet

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