FCA35N60 MOSFET PDF: N-Ch, 600V, 35A. Datasheet. Full specification with pinout and replacement list

FCA35N60 Specs and Replacement

   Type Designator: FCA35N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO3PN

FCA35N60 substitution

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FCA35N60 datasheet

..1. Size:764K fairchild semi
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March 2009 SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild s proprietary, new generation of high 650V @ TJ = 150 C voltage MOSFET family that is utilizing an advanced charge bal- Typ.RDS(on) = 0.079 ance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance. ... See More ⇒

..2. Size:1531K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N , IRF222 , IRF730 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C .