WNM3018 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WNM3018
   Código: 18*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 1.6 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT323

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WNM3018 Datasheet (PDF)

..1. Size:2511K willsemi
wnm3018.pdf

WNM3018 WNM3018 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGS501.9@ V =2.5VGS5.4@ V =1.8VGSESD Rating: 2000V HBMDescriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc

8.1. Size:1778K willsemi
wnm3017.pdf

WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5)VDS (V) Typical RDS(on) (m) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2)(2)(1)(3) Descriptions DFN2x2-6L D D SThe WNM3017 is N-Channel enhancement 6 5 4MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8D Swith

8.2. Size:465K willsemi
wnm3011.pdf

WNM3011WNM3011Http://www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS()0.028@ 10V30V0.039@ 4.5VSOT-23-6L SD DDescriptions6 5 4The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3D

8.3. Size:1641K willsemi
wnm3013.pdf

WNM3013 WNM3013 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET DV (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGSS50G1.9@ V =2.5VGS4.0@ V =1.8VGSSOT-723 ESD Rating: 2000V HBMD3Descriptions 1 2The WNM3013 is N-Channel enhancement MOS G SField Effect Transistor. Uses advanced trench technology and design to prov

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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