WNM3018 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WNM3018 datasheet

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WNM3018 WNM3018 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS 50 1.9@ V =2.5V GS 5.4@ V =1.8V GS ESD Rating 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc

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WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5) VDS (V) Typical RDS(on) (m ) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2) (2) (1) (3) Descriptions DFN2x2-6L D D S The WNM3017 is N-Channel enhancement 6 5 4 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8 D S with

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WNM3011 WNM3011 Http //www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.028@ 10V 30V 0.039@ 4.5V SOT-23-6L S D D Descriptions 6 5 4 The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3 D

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WNM3013 WNM3013 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET D V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS S 50 G 1.9@ V =2.5V GS 4.0@ V =1.8V GS SOT-723 ESD Rating 2000V HBM D 3 Descriptions 1 2 The WNM3013 is N-Channel enhancement MOS G S Field Effect Transistor. Uses advanced trench technology and design to prov

Otros transistores... WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , WNM01N10 , WNM2016A , WNM2046C , WNM2077 , 7N65 , WNM3025 , WNM6002 , WNM7002 , WNMD2167 , WPM2081 , WPM2083 , WPM2087 , WPM3020 .