WNM3018
MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM3018
Marking Code: 18*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.6
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 22
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
SOT323
WNM3018
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM3018
Datasheet (PDF)
..1. Size:2511K willsemi
wnm3018.pdf
WNM3018 WNM3018 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGS501.9@ V =2.5VGS5.4@ V =1.8VGSESD Rating: 2000V HBMDescriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc
8.1. Size:1778K willsemi
wnm3017.pdf
WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5)VDS (V) Typical RDS(on) (m) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2)(2)(1)(3) Descriptions DFN2x2-6L D D SThe WNM3017 is N-Channel enhancement 6 5 4MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8D Swith
8.2. Size:465K willsemi
wnm3011.pdf
WNM3011WNM3011Http://www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS()0.028@ 10V30V0.039@ 4.5VSOT-23-6L SD DDescriptions6 5 4The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3D
8.3. Size:1641K willsemi
wnm3013.pdf
WNM3013 WNM3013 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET DV (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGSS50G1.9@ V =2.5VGS4.0@ V =1.8VGSSOT-723 ESD Rating: 2000V HBMD3Descriptions 1 2The WNM3013 is N-Channel enhancement MOS G SField Effect Transistor. Uses advanced trench technology and design to prov
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