WNM3018 MOSFET Datasheet: N-Ch, 50V, 0.23A. Full specification with pinout and replacement list

WNM3018 Specs and Replacement

Type Designator: WNM3018

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT323

WNM3018 substitution

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WNM3018 datasheet

..1. Size:2511K willsemi
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WNM3018 WNM3018 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS 50 1.9@ V =2.5V GS 5.4@ V =1.8V GS ESD Rating 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc... See More ⇒

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WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5) VDS (V) Typical RDS(on) (m ) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2) (2) (1) (3) Descriptions DFN2x2-6L D D S The WNM3017 is N-Channel enhancement 6 5 4 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8 D S with ... See More ⇒

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WNM3011 WNM3011 Http //www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.028@ 10V 30V 0.039@ 4.5V SOT-23-6L S D D Descriptions 6 5 4 The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3 D... See More ⇒

8.3. Size:1641K willsemi
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WNM3013 WNM3013 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET D V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS S 50 G 1.9@ V =2.5V GS 4.0@ V =1.8V GS SOT-723 ESD Rating 2000V HBM D 3 Descriptions 1 2 The WNM3013 is N-Channel enhancement MOS G S Field Effect Transistor. Uses advanced trench technology and design to prov... See More ⇒

Detailed specifications: WST8205A, WSTBSS123, WSTBSS138, WCM2079, WNM01N10, WNM2016A, WNM2046C, WNM2077, 7N65, WNM3025, WNM6002, WNM7002, WNMD2167, WPM2081, WPM2083, WPM2087, WPM3020