SE120120G Todos los transistores

 ..1. Size:569K  cn sino-ic
 se120120g.pdf

SE120120G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET This device used advanced semiconductor technology and design to provide excellent RDS(ON) V =120V DS with low gate charge and low operation voltage. It can R =4.4m @V =10V DS(ON) GS be used in wide variety of application Excellent package for superior thermal resis

 9.1. Size:457K  crhj
 crse120n10l2.pdf

CRSE120N10L2 ( ) SkyMOS2 N-MOSFET 100, 11.0m , 11A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ 11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 14.0m ID Qualified according to JEDEC criteria 11A Applications Synchronous Rectification f

 9.2. Size:687K  cn sino-ic
 se12060ga.pdf

SE12060GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 120V DS Voltage and Current Improved Shoot-Through R = 12m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuration