SE120120G Datasheet and Replacement. Cross Reference Search

SE120120G Datasheet (PDF)

..1. Size:569K cn sino-ic
se120120g.pdf pdf_icon

SE120120GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETThis device used advanced semiconductortechnology and design to provide excellent RDS(ON) V =120VDSwith low gate charge and low operation voltage. It can R =4.4m @V =10VDS(ON) GSbe used in wide variety of application Excellent package for superior thermal resis

9.1. Size:457K crhj
crse120n10l2.pdf pdf_icon

CRSE120N10L2() SkyMOS2 N-MOSFET 100, 11.0m, 11AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ14.0mID Qualified according to JEDEC criteria 11AApplications Synchronous Rectification f

9.2. Size:687K cn sino-ic
se12060ga.pdf pdf_icon

SE12060GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 120VDSVoltage and Current Improved Shoot-Through R = 12m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuration

Datasheet: SE100150G , SE100180GA , SE100250GTS , SE1003 , SE10030A , SE10060A , SE10080A , SE100P60 , IRFP250 , SE12060GA , SE1216 , SE12N50FRA , SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS .