SE1991GA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SE1991GA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 223 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO220 TO263
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SE1991GA Datasheet (PDF)
se1991ga.pdf

SE1991GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSe
se1991g.pdf

SE1991GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V =100VDSsuch as fast switching time, low gate charge, R =3.8m @V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configurationsSee
Otros transistores... SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS , SE15N50FRA , SE18NS65A , SE1991G , IRF2807 , SE200100G , SE20040 , SE20075 , SE2060 , SE20N110 , SE20P03 , SE2101 , SE2101E .
History: JMSL0604AG | WMP07N60C4 | WMP08N65C4 | BSC152N10NSFG | SI2310B | BSC265N10LSFG | AUIRF1010ZS
History: JMSL0604AG | WMP07N60C4 | WMP08N65C4 | BSC152N10NSFG | SI2310B | BSC265N10LSFG | AUIRF1010ZS



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