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SE1991GA Specs and Replacement

Type Designator: SE1991GA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 223 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220 TO263

SE1991GA substitution

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SE1991GA datasheet

 ..1. Size:359K  cn sino-ic
se1991ga.pdf pdf_icon

SE1991GA

SE1991GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, V =100V DS such as fast switching time, low gate charge, R =3.8m @V =10V DS(ON) GS low on-state resistance and have a high rugged avalanche characteristics Pin configurations Se... See More ⇒

 7.1. Size:359K  cn sino-ic
se1991g.pdf pdf_icon

SE1991GA

SE1991G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, V =100V DS such as fast switching time, low gate charge, R =3.8m @V =10V DS(ON) GS low on-state resistance and have a high rugged avalanche characteristics Pin configurations See... See More ⇒

Detailed specifications: SE12N65, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA, SE18NS65A, SE1991G, RFP50N06, SE200100G, SE20040, SE20075, SE2060, SE20N110, SE20P03, SE2101, SE2101E

Keywords - SE1991GA MOSFET specs

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