SE3080K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE3080K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 51 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET SE3080K

SE3080K Datasheet (PDF)

..1. Size:444K cn sino-ic
se3080a se3080k.pdf

SE3080A/KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =30VDSoperation voltage. This device is suitable for R =4.5m @V =10V(SE3080A)DS(ON) GSusing as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K)DS(ON) GS Sim

8.1. Size:340K cn sino-ic
se3080g.pdf

SE3080GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R =4.5m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6

9.1. Size:993K winsok
wse3088.pdf

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

9.2. Size:673K cn sino-ic
se3082g.pdf

SE3082GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 30VDSVoltage and Current Improved Shoot-Through R = 5.0m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HM25N06D | MSU4N60 | SDF9N100JED-D | 2SK1936

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