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SE3080K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE3080K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 460 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
   Paquete / Cubierta: TO252

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SE3080K Datasheet (PDF)

 ..1. Size:444K  cn sino-ic
se3080a se3080k.pdf

SE3080K SE3080K

SE3080A/KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =30VDSoperation voltage. This device is suitable for R =4.5m @V =10V(SE3080A)DS(ON) GSusing as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K)DS(ON) GS Sim

 8.1. Size:340K  cn sino-ic
se3080g.pdf

SE3080K SE3080K

SE3080GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R =4.5m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6

 9.1. Size:993K  winsok
wse3088.pdf

SE3080K SE3080K

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

 9.2. Size:673K  cn sino-ic
se3082g.pdf

SE3080K SE3080K

SE3082GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 30VDSVoltage and Current Improved Shoot-Through R = 5.0m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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