SE3080K - Даташиты. Аналоги. Основные параметры

SE3080A/KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =30VDSoperation voltage. This device is suitable for R =4.5m @V =10V(SE3080A)DS(ON) GSusing as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K)DS(ON) GS Sim

SE3080GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R =4.5m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

SE3082GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 30VDSVoltage and Current Improved Shoot-Through R = 5.0m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations