All MOSFET. SE3080K Datasheet

 

SE3080K MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE3080K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252

 SE3080K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE3080K Datasheet (PDF)

 ..1. Size:444K  cn sino-ic
 se3080a se3080k.pdf

SE3080K SE3080K

SE3080A/KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =30VDSoperation voltage. This device is suitable for R =4.5m @V =10V(SE3080A)DS(ON) GSusing as a load switch or in PWM applications. R =4.5m @V =10V(SE3080K)DS(ON) GS Sim

 8.1. Size:340K  cn sino-ic
 se3080g.pdf

SE3080K SE3080K

SE3080GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R =4.5m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6

 9.1. Size:993K  winsok
 wse3088.pdf

SE3080K SE3080K

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P

 9.2. Size:673K  cn sino-ic
 se3082g.pdf

SE3080K SE3080K

SE3082GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 30VDSVoltage and Current Improved Shoot-Through R = 5.0m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFP9140N

 

 
Back to Top