FCB36N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCB36N60N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 312 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 36 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 86 nC
Resistencia drenaje-fuente RDS(on): 0.09 Ohm
Empaquetado / Estuche: D2PAK
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FCB36N60N Datasheet (PDF)
1.1. fcb36n60ntm.pdf Size:355K _upd-mosfet
September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies.
1.2. fcb36n60n.pdf Size:355K _fairchild_semi
September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m? Features Description RDS(on) = 81m? ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. By utilizing
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



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