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FCB36N60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCB36N60N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 312 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 86 nC

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: D2PAK

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FCB36N60N Datasheet (PDF)

1.1. fcb36n60ntm.pdf Size:355K _upd-mosfet

FCB36N60N
FCB36N60N

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies.

1.2. fcb36n60n.pdf Size:355K _fairchild_semi

FCB36N60N
FCB36N60N

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m? Features Description RDS(on) = 81m? ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. By utilizing

 

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