All MOSFET. FCB36N60N Datasheet

 

FCB36N60N Datasheet and Replacement


   Type Designator: FCB36N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 86 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: D2PAK
 

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FCB36N60N Datasheet (PDF)

 ..1. Size:355K  fairchild semi
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FCB36N60N

September 2010SupreMOSTMFCB36N60NN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

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Keywords - FCB36N60N MOSFET datasheet

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