All MOSFET. FCB36N60N Equivalents Search

 

FCB36N60N Spec and Replacement


   Type Designator: FCB36N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: D2PAK

 FCB36N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCB36N60N Specs

 ..1. Size:355K  fairchild semi
 fcb36n60n fcb36n60ntm.pdf pdf_icon

FCB36N60N

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. ... See More ⇒

Detailed specifications: FCA76N60N , 2SJ245 , FCB11N60 , 2SK3653 , FCB20N60 , 2SK3057 , 2SK3469-01MR , FCB20N60F , IRFB4227 , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM .

History: HUFA76429D3

Keywords - FCB36N60N MOSFET specs

 FCB36N60N cross reference
 FCB36N60N equivalent finder
 FCB36N60N lookup
 FCB36N60N substitution
 FCB36N60N replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.