FCB36N60N Datasheet. Specs and Replacement

Type Designator: FCB36N60N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: D2PAK

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FCB36N60N datasheet

 ..1. Size:355K  fairchild semi
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FCB36N60N

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. ... See More ⇒

Detailed specifications: FCA76N60N, 2SJ245, FCB11N60, 2SK3653, FCB20N60, 2SK3057, 2SK3469-01MR, FCB20N60F, IRFB4227, 2SJ279, FCD4N60, IRFD9020, FCD5N60, STU9916L, FCD7N60, STU816S, FCD9N60NTM

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