APM2306A Todos los transistores

 

APM2306A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APM2306A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

APM2306A Datasheet (PDF)

 ..1. Size:305K  sino
apm2306a.pdf pdf_icon

APM2306A

APM2306AN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3.5A ,D RDS(ON)= 65m (max.) @ VGS=10VS RDS(ON)= 90m (max.) @ VGS=5VG Super High Dense Cell Design Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSys

 8.1. Size:497K  sino
apm2304a.pdf pdf_icon

APM2306A

APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

 8.2. Size:169K  sino
apm2301ca.pdf pdf_icon

APM2306A

APM2301CA P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3ADRDS(ON)= 70m (max.) @ VGS= -4.5VSRDS(ON)= 115m (max.) @ VGS= -2.5VGRDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and RuggedTop View of SOT-23 Lead Free and Green Devices Available( RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and

 8.3. Size:498K  sino
apm2303a.pdf pdf_icon

APM2306A

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SPD3N80G | 2SK1336 | CSD17310Q5A | WSD4066DN | AOLF66610 | VS3618AE | HCD60R900

 

 
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