APM2306A PDF and Equivalents Search

 

APM2306A Specs and Replacement

Type Designator: APM2306A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23

APM2306A substitution

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APM2306A datasheet

 ..1. Size:305K  sino
apm2306a.pdf pdf_icon

APM2306A

APM2306A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3.5A , D RDS(ON)= 65m (max.) @ VGS=10V S RDS(ON)= 90m (max.) @ VGS=5V G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sys... See More ⇒

 8.1. Size:497K  sino
apm2304a.pdf pdf_icon

APM2306A

APM2304A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5A, D RDS(ON)= 22m (typ.) @ VGS= 10V S RDS(ON)= 32m (typ.) @ VGS= 4.5V G Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Power... See More ⇒

 8.2. Size:169K  sino
apm2301ca.pdf pdf_icon

APM2306A

APM2301CA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A D RDS(ON)= 70m (max.) @ VGS= -4.5V S RDS(ON)= 115m (max.) @ VGS= -2.5V G RDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available ( RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and... See More ⇒

 8.3. Size:498K  sino
apm2303a.pdf pdf_icon

APM2306A

APM2303A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=115m (max.) @ VGS=-2.5V Top View of SOT-23-3 Super High Dense Cell Design D Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available (RoHS Compliant) G Applications P... See More ⇒

Detailed specifications: SED30P30M, SED4060G, SED4060GM, SED5852, SED8830A, SED8840, APM2300CA, APM2301CA, IRF830, APM2309A, APM2317A, APM2324AA, APM2360A, SM1A16PUB, SM1A63NHUC, SM3419NHQA, SM3429BSQA

Keywords - APM2306A MOSFET specs

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