FCD7N60 Todos los transistores

 

FCD7N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCD7N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO252 DPAK

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FCD7N60 datasheet

 ..1. Size:1005K  fairchild semi
 fcd7n60 fcu7n60.pdf pdf_icon

FCD7N60

December 2008 TM SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

 ..2. Size:543K  onsemi
 fcd7n60.pdf pdf_icon

FCD7N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , P55NF06 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 .

 

 

 


 
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