FCD7N60 Todos los transistores

 

FCD7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCD7N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FCD7N60 Datasheet (PDF)

 ..1. Size:1005K  fairchild semi
 fcd7n60 fcu7n60.pdf pdf_icon

FCD7N60

December 2008 TMSuperFETFCD7N60 / FCU7N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

 ..2. Size:543K  onsemi
 fcd7n60.pdf pdf_icon

FCD7N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , IRFB4115 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 .

 

 
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