All MOSFET. FCD7N60 Datasheet


FCD7N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD7N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Total Gate Charge (Qg): 23 nC

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO252, DPAK

FCD7N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FCD7N60 Datasheet (PDF)

1.1. fcd7n60 fcu7n60.pdf Size:1005K _fairchild_semi


December 2008 TM SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.53Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=23nC) lower gate charge performan

Datasheet: 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , IRF510 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 .


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