VSP007P06MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VSP007P06MS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 115 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: PDFN5X6
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VSP007P06MS Datasheet (PDF)
vsp007p06ms.pdf

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VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa
Otros transistores... VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , VSP007N07MS , 5N65 , VSP008N10MSC , VSP020P06MS , VST007N07MS , VST012N06MS , VST018N10MS , 2SK2897-01 , 2SK2907-01 , 2SK2908-01L .
History: PMV37EN2 | 2N65L-TMS-T | MEE15N10-G | STU12N60M2 | 7N65KL-TM3-T | DH100P40D | VBZM75NF75
History: PMV37EN2 | 2N65L-TMS-T | MEE15N10-G | STU12N60M2 | 7N65KL-TM3-T | DH100P40D | VBZM75NF75



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