VSP007P06MS Specs and Replacement
Type Designator: VSP007P06MS
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 115
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 450
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
PDFN5X6
-
MOSFET ⓘ Cross-Reference Search
VSP007P06MS datasheet
..1. Size:327K cn vanguard
vsp007p06ms.pdf 
VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 V R DS(on),TYP@ VGS=-10 V 8.0 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty... See More ⇒
8.1. Size:779K cn vanguard
vsp007n07ms.pdf
VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I... See More ⇒
8.2. Size:978K cn vgsemi
vsp007n04ms-g.pdf
VSP007N04MS-G 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on) I D 80 A VitoMOS Technology PDFN5x6 100% Avalanche test Tape and reel Part ID Package Type Marking information VSP007N04MS-G PDFN5x6 007N04M 3000PCS/Reel Maximum ratings, at ... See More ⇒
9.1. Size:715K cn vanguard
vsp008n10msc.pdf
VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa... See More ⇒
9.2. Size:1019K cn vgsemi
vsp002n03ms-g.pdf
VSP002N03MS-G 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 V I D 150 A VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP002N03MS-G PDFN5x6 002N03M 30... See More ⇒
9.3. Size:1238K cn vgsemi
vsp005n03ms.pdf
VSP005N03MS 30V/105A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.7 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 4.1 m Enhancement mode I D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packin... See More ⇒
9.4. Size:1099K cn vgsemi
vsp003n04hs-g.pdf
VSP003N04HS-G 40V/33A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.6 m Enhancement mode I D(Silicon Limited) 78 A Very low on-resistance I D(Package Limited) 33 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Part ID Package Type Marking Packing VSP003N04HS-G PDFN5x6 003N04H 3000pcs/Reel Maximum ratings, at T... See More ⇒
9.5. Size:1013K cn vgsemi
vsp003n04ms-g.pdf
VSP003N04MS-G 40V/110A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 2.3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.4 m Low on-resistance RDS(on) @ VGS=4.5 V I D 110 A VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP003N04MS-G PDFN5x6 003N04M 30... See More ⇒
9.6. Size:1023K cn vgsemi
vsp002n03ms.pdf
VSP002N03MS 30V/100A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 0.8 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High Efficiency I D(Silicon Limited) 365 A High Current Capability I D(Package Limited) 100 A Enable Better Thermal Dissipation PDFN5x6 100% Avalanche Test Part ID Package ... See More ⇒
9.7. Size:935K cn vgsemi
vsp003n04mst-g.pdf
VSP003N04MST-G 40V/150A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.8 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.6 m Very low on-resistance I D(Silicon Limited) 232 A VitoMOS Technology I D(Package Limited) 150 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marki... See More ⇒
9.8. Size:1443K cn vgsemi
vsp008c03md.pdf
VSP008C03MD 30V N+P Channel Advanced Power MOSFET V DS 30 -30 V Features R DS(on),TYP@ VGS= 10 V 6.5 13 m N+P Channel R DS(on),TYP@ VGS= 4.5V 10 24 m Enhancement mode I D 45 -35 A Very low on-resistance Fast Switching PDFN5x6 Dual Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP008C03MD PDFN5x6 Dual 008C03MD 3000pcs/Reel Ma... See More ⇒
9.9. Size:1131K cn vgsemi
vsp002n03mst-g.pdf
VSP002N03MST-G 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 1.3 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistance I D(Silicon Limited) 163 A VitoMOS Technology I D(Package Limited) 150 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested Part ID Package Type Marking Packing VSP... See More ⇒
Detailed specifications: VSI080N06MS
, VSO008N10MS
, VSO009N06MS-G
, VSO009N06MS-GA
, VSO011N06MS
, VSO012N06MS
, VSO025C03MC
, VSP007N07MS
, 2SK3568
, VSP008N10MSC
, VSP020P06MS
, VST007N07MS
, VST012N06MS
, VST018N10MS
, 2SK2897-01
, 2SK2907-01
, 2SK2908-01L
.
History: FDC3612
Keywords - VSP007P06MS MOSFET specs
VSP007P06MS cross reference
VSP007P06MS equivalent finder
VSP007P06MS pdf lookup
VSP007P06MS substitution
VSP007P06MS replacement
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