2SK3112-S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3112-S datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3112 TO-220AB and designed for high voltage applications such as DC/DC 2SK3112-S TO-262 converter, actuator d

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isc N-Channel MOSFET Transistor 2SK3112-S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

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2sk3112-zj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3112-ZJ FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

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SMD Type MOSFET MOS Field Effect Transistor 2SK3112 TO-263 Unit mm Features +0.2 4.57-0.2 Gate voltage rating 30 V +0.1 1.27-0.1 Low on-state resistance RDS(on) = 110m MAX. (VGS =10 V, ID = 13A) Low input capacitance +0.1 0.1max 1.27-0.1 Ciss = 1600 pF TYP. (VDS =10V, VGS =0V) +0.1 Avalanche capability rated 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0