2SK3112-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3112-S
   Código: 60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 100 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Voltaje de corte de la puerta |Vgs(off)|: 2.5 V
   Tiempo de subida (tr): 140 nS
   Conductancia de drenaje-sustrato (Cd): 430 pF
   Resistencia entre drenaje y fuente RDS(on): 0.11 Ohm
   Paquete / Cubierta: TO262

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2SK3112-S Datasheet (PDF)

..1. Size:79K 1
2sk3112-s 2sk3112-zj 2sk3112.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3112SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3112 TO-220ABand designed for high voltage applications such as DC/DC2SK3112-S TO-262converter, actuator d

..2. Size:282K inchange semiconductor
2sk3112-s.pdf

isc N-Channel MOSFET Transistor 2SK3112-SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

6.1. Size:356K inchange semiconductor
2sk3112-zj.pdf

isc N-Channel MOSFET Transistor 2SK3112-ZJFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

7.1. Size:46K kexin
2sk3112.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0

7.2. Size:288K inchange semiconductor
2sk3112.pdf

isc N-Channel MOSFET Transistor 2SK3112FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

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