2SK3112-S - параметры транзистора MOSFET, его аналоги, datasheet

2SK3112-S Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3112SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3112 TO-220ABand designed for high voltage applications such as DC/DC2SK3112-S TO-262converter, actuator d

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isc N-Channel MOSFET Transistor 2SK3112-SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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isc N-Channel MOSFET Transistor 2SK3112-ZJFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0