2SK3112-S PDF and Equivalents Search

 

2SK3112-S Specs and Replacement

Type Designator: 2SK3112-S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO262

2SK3112-S substitution

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2SK3112-S datasheet

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2sk3112-s 2sk3112-zj 2sk3112.pdf pdf_icon

2SK3112-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3112 TO-220AB and designed for high voltage applications such as DC/DC 2SK3112-S TO-262 converter, actuator d... See More ⇒

 ..2. Size:282K  inchange semiconductor
2sk3112-s.pdf pdf_icon

2SK3112-S

isc N-Channel MOSFET Transistor 2SK3112-S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 6.1. Size:356K  inchange semiconductor
2sk3112-zj.pdf pdf_icon

2SK3112-S

isc N-Channel MOSFET Transistor 2SK3112-ZJ FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 7.1. Size:46K  kexin
2sk3112.pdf pdf_icon

2SK3112-S

SMD Type MOSFET MOS Field Effect Transistor 2SK3112 TO-263 Unit mm Features +0.2 4.57-0.2 Gate voltage rating 30 V +0.1 1.27-0.1 Low on-state resistance RDS(on) = 110m MAX. (VGS =10 V, ID = 13A) Low input capacitance +0.1 0.1max 1.27-0.1 Ciss = 1600 pF TYP. (VDS =10V, VGS =0V) +0.1 Avalanche capability rated 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0... See More ⇒

Detailed specifications: 2SK2908-01S, 2SK2918-01, 2SK2923, 2SK2924, 2SK294, 2SK295, 2SK3092D, 2SK3092I, IRFB31N20D, 2SK3112-ZJ, 2SK3113-Z, 2SK3124, 2SK3127B, 2SK3127K, 2SK3285B, 2SK3285K, 2SK3309B

Keywords - 2SK3112-S MOSFET specs

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