All MOSFET. 2SK3112-S Datasheet

 

2SK3112-S MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3112-S
   Marking Code: 60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO262

 2SK3112-S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3112-S Datasheet (PDF)

 ..1. Size:79K  1
 2sk3112-s 2sk3112-zj 2sk3112.pdf

2SK3112-S 2SK3112-S

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3112SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3112 TO-220ABand designed for high voltage applications such as DC/DC2SK3112-S TO-262converter, actuator d

 ..2. Size:282K  inchange semiconductor
 2sk3112-s.pdf

2SK3112-S 2SK3112-S

isc N-Channel MOSFET Transistor 2SK3112-SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 6.1. Size:356K  inchange semiconductor
 2sk3112-zj.pdf

2SK3112-S 2SK3112-S

isc N-Channel MOSFET Transistor 2SK3112-ZJFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. Size:46K  kexin
 2sk3112.pdf

2SK3112-S

SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0

 7.2. Size:288K  inchange semiconductor
 2sk3112.pdf

2SK3112-S 2SK3112-S

isc N-Channel MOSFET Transistor 2SK3112FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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