SM3404SRL Todos los transistores

 ..1. Size:765K  cn sps
 sm3404srl.pdf

SM3404SRL 30V /5A Single N Power MOSFET B N03B N 30V /5A Single N Power MOSFET 5N03B General Description 30 V V DS 30V /5A Single N Power MOSFET 30.1 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 47.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 5 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM340

 8.1. Size:338K  taiwansemi
 tsm3404cx.pdf

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac

 8.2. Size:165K  sino
 sm3404nsqg.pdf

SM3404NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) =2.8m (max.) @ VGS =10V RDS(ON) =3.6m (max.) @ VGS =4.5V G S S S ESD protection DFN3.3x3.3-8(Saw-EP) 100% UIS + Rg Tested Avalanche Rated (5,6,7,8) DDDD Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management

 8.3. Size:867K  globaltech semi
 gsm3404.pdf

GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta