SM3404SRL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3404SRL
Código: A09T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 2.55 nC
Tiempo de subida (tr): 3.4 nS
Conductancia de drenaje-sustrato (Cd): 45 pF
Resistencia entre drenaje y fuente RDS(on): 0.043 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM3404SRL
SM3404SRL Datasheet (PDF)
sm3404srl.pdf
SM3404SRL30V /5A Single N Power MOSFET B N03B N 30V /5A Single N Power MOSFET 5N03BGeneral Description 30 VV DS30V /5A Single N Power MOSFET 30.1 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 47.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 5 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM340
tsm3404cx.pdf
TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac
sm3404nsqg.pdf
SM3404NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS ESD protectionDFN3.3x3.3-8(Saw-EP) 100% UIS + Rg Tested Avalanche Rated(5,6,7,8)DDDD Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management
gsm3404.pdf
GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta
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