All MOSFET. SM3404SRL Datasheet

 

SM3404SRL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM3404SRL
   Marking Code: A09T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.55 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23

 SM3404SRL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM3404SRL Datasheet (PDF)

 ..1. Size:765K  cn sps
sm3404srl.pdf

SM3404SRL
SM3404SRL

SM3404SRL30V /5A Single N Power MOSFET B N03B N 30V /5A Single N Power MOSFET 5N03BGeneral Description 30 VV DS30V /5A Single N Power MOSFET 30.1 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 47.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 5 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM340

 8.1. Size:338K  taiwansemi
tsm3404cx.pdf

SM3404SRL
SM3404SRL

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 30 @ VGS = 10V 5.8 30 43 @ VGS = 4.5V 5.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pac

 8.2. Size:165K  sino
sm3404nsqg.pdf

SM3404SRL
SM3404SRL

SM3404NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) =2.8m(max.) @ VGS =10VRDS(ON) =3.6m(max.) @ VGS =4.5VGSSS ESD protectionDFN3.3x3.3-8(Saw-EP) 100% UIS + Rg Tested Avalanche Rated(5,6,7,8)DDDD Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management

 8.3. Size:867K  globaltech semi
gsm3404.pdf

SM3404SRL
SM3404SRL

GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

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History: S-LN2312LT1G

 

 
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