STU660 Todos los transistores

 

STU660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU660
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 19 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm
   Paquete / Cubierta: TO252 DPAK
     - Selección de transistores por parámetros

 

STU660 Datasheet (PDF)

 ..1. Size:120K  samhop
stu660 std660.pdf pdf_icon

STU660

GreenProductSTU/D660SamHop Microelectronics Corp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.620 @VGS=10VTO-252 and TO-251 Package.80V 3A800 @VGS=4.5VESD Protected.DGGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-

 9.1. Size:124K  samhop
stu666s std666s.pdf pdf_icon

STU660

STU666SGreenProductSTD666SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.101 @ VGS=10VTO-252 and TO-251 Package.60V 6A 126 @ VGS=4.5V GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.2. Size:124K  samhop
stu668s std668s.pdf pdf_icon

STU660

STU668SGreenProductSTD668SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.0 @ VGS=10VTO-252 and TO-251 Package.60V 50A13.2 @ VGS=4.5VGSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.3. Size:117K  samhop
stu664s std664s.pdf pdf_icon

STU660

STU664SGreenProductSTD664SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.60V 30A 20 @VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS

Otros transistores... STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , TK10A60D , FCH47N60N , STU650S , FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S .

History: BUK768R1-100E | NVMFS5C456NL | DMN4010LFG | NP88N04DHE | FQD5N30TF | IRFU4104 | 2N06L07B

 

 
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