All MOSFET. STU660 Datasheet

 

STU660 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU660
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Qgⓘ - Total Gate Charge: 2.73 nC
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO252 DPAK

 STU660 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU660 Datasheet (PDF)

 ..1. Size:120K  samhop
 stu660 std660.pdf

STU660 STU660

GreenProductSTU/D660SamHop Microelectronics Corp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.620 @VGS=10VTO-252 and TO-251 Package.80V 3A800 @VGS=4.5VESD Protected.DGGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-

 9.1. Size:124K  samhop
 stu666s std666s.pdf

STU660 STU660

STU666SGreenProductSTD666SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.101 @ VGS=10VTO-252 and TO-251 Package.60V 6A 126 @ VGS=4.5V GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.2. Size:124K  samhop
 stu668s std668s.pdf

STU660 STU660

STU668SGreenProductSTD668SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.0 @ VGS=10VTO-252 and TO-251 Package.60V 50A13.2 @ VGS=4.5VGSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.3. Size:117K  samhop
 stu664s std664s.pdf

STU660 STU660

STU664SGreenProductSTD664SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.60V 30A 20 @VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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