SMIRF4N65TBRL Todos los transistores

 

SMIRF4N65TBRL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMIRF4N65TBRL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO251
 

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SMIRF4N65TBRL Datasheet (PDF)

 5.1. Size:753K  cn sps
 smirf4n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF4N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8(VGS=10V, ID=2A) on-state resistance, provide superior swi

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF4N65TBRL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

MOSTRAR MÁS

Otros transistores... SMIRF18N50T1TL , SMIRF18N50T2TL , SMIRF18N50T8TL , SMIRF20N65T1TL , SMIRF20N65T2TL , SMIRF20N65T8TL , SMIRF4N65T1TL , SMIRF4N65T2TL , 5N50 , SMIRF4N65T9RL , SMIRF5N65T1TL , SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , SMIRF7N65T1TL , SMIRF7N65T2TL , SMIRF7N65T9RL .

History: IRFBE30SPBF | 2SK3371

 

 
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