SMIRF4N65TBRL Datasheet. Specs and Replacement

Type Designator: SMIRF4N65TBRL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO251

SMIRF4N65TBRL substitution

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SMIRF4N65TBRL datasheet

 5.1. Size:753K  cn sps
 smirf4n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF4N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8 (VGS=10V, ID=2A) on-state resistance, provide superior swi... See More ⇒

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF4N65TBRL

SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒

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Detailed specifications: SMIRF18N50T1TL, SMIRF18N50T2TL, SMIRF18N50T8TL, SMIRF20N65T1TL, SMIRF20N65T2TL, SMIRF20N65T8TL, SMIRF4N65T1TL, SMIRF4N65T2TL, IRFP064N, SMIRF4N65T9RL, SMIRF5N65T1TL, SMIRF5N65T2TL, SMIRF5N65TBRL, SMIRF5N65T9TL, SMIRF7N65T1TL, SMIRF7N65T2TL, SMIRF7N65T9RL

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