Справочник MOSFET. SMIRF4N65TBRL

 

SMIRF4N65TBRL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SMIRF4N65TBRL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 62 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для SMIRF4N65TBRL

   - подбор ⓘ MOSFET транзистора по параметрам

 

SMIRF4N65TBRL Datasheet (PDF)

 5.1. Size:753K  cn sps
 smirf4n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF4N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8(VGS=10V, ID=2A) on-state resistance, provide superior swi

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF4N65TBRL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF4N65TBRL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SMIRF18N50T1TL , SMIRF18N50T2TL , SMIRF18N50T8TL , SMIRF20N65T1TL , SMIRF20N65T2TL , SMIRF20N65T8TL , SMIRF4N65T1TL , SMIRF4N65T2TL , 5N50 , SMIRF4N65T9RL , SMIRF5N65T1TL , SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , SMIRF7N65T1TL , SMIRF7N65T2TL , SMIRF7N65T9RL .

History: IRFP254PBF | NCEP015N60LL | AONS36308 | AP94T07GP-HF | AOT410L | AONS660A60 | CS20N65P

 

 
Back to Top

 


 
.