FCP11N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP11N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 40 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO220
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FCP11N60F Datasheet (PDF)
fcp11n60f fcpf11n60f.pdf

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance
fcp11n60f.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp11n60n fcpf11n60nt.pdf

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi
fcp11n60 fcpf11n60 fcpf11n60t.pdf

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu
Otros transistores... FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S , FCI7N60 , STU616S , IRLZ44N , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N , STU608S , FCP22N60N .
History: NTUD3127C | IRFI1010N
History: NTUD3127C | IRFI1010N



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