All MOSFET. FCP11N60F Datasheet

 

FCP11N60F Datasheet and Replacement


   Type Designator: FCP11N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220
 

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FCP11N60F Datasheet (PDF)

 ..1. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdf pdf_icon

FCP11N60F

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

 ..2. Size:594K  onsemi
fcp11n60f.pdf pdf_icon

FCP11N60F

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdf pdf_icon

FCP11N60F

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi

 6.2. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdf pdf_icon

FCP11N60F

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu

Datasheet: FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S , FCI7N60 , STU616S , P60NF06 , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N , STU608S , FCP22N60N .

History: BSS138DW | BUZ90A | HUF75339S3ST | 2SK2494-01 | DHS025N88I | IRLR210A | IRLR2703

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