FCP11N60F - описание и поиск аналогов

 

FCP11N60F. Аналоги и основные параметры

Наименование производителя: FCP11N60F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm

Тип корпуса: TO220

Аналог (замена) для FCP11N60F

- подборⓘ MOSFET транзистора по параметрам

 

FCP11N60F даташит

 ..1. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdfpdf_icon

FCP11N60F

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

 ..2. Size:594K  onsemi
fcp11n60f.pdfpdf_icon

FCP11N60F

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdfpdf_icon

FCP11N60F

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299 Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi

 6.2. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdfpdf_icon

FCP11N60F

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor s first 650V @Tj = 150 C genera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective outpu

Другие MOSFET... FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S , FCI7N60 , STU616S , AON6380 , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N , STU608S , FCP22N60N .

History: STU609S | FCP11N60N

 

 

 


 
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