FCP13N60N Todos los transistores

 

FCP13N60N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP13N60N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 116 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.258 Ohm

Encapsulados: TO220

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FCP13N60N datasheet

 ..1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdf pdf_icon

FCP13N60N

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based

 ..2. Size:785K  onsemi
fcp13n60n fcpf13n60nt.pdf pdf_icon

FCP13N60N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp13n60n.pdf pdf_icon

FCP13N60N

isc N-Channel MOSFET Transistor FCP13N60N FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.1. Size:1218K  fairchild semi
fcp130n60.pdf pdf_icon

FCP13N60N

September 2014 FCP130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC) and

Otros transistores... FCI25N60NF102 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , AON7506 , STU609S , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N .

 

 

 


 
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