FCP13N60N PDF and Equivalents Search

 

FCP13N60N Specs and Replacement

Type Designator: FCP13N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 116 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.258 Ohm

Package: TO220

FCP13N60N substitution

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FCP13N60N datasheet

 ..1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdf pdf_icon

FCP13N60N

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based ... See More ⇒

 ..2. Size:785K  onsemi
fcp13n60n fcpf13n60nt.pdf pdf_icon

FCP13N60N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:257K  inchange semiconductor
fcp13n60n.pdf pdf_icon

FCP13N60N

isc N-Channel MOSFET Transistor FCP13N60N FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

 9.1. Size:1218K  fairchild semi
fcp130n60.pdf pdf_icon

FCP13N60N

September 2014 FCP130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC) and ... See More ⇒

Detailed specifications: FCI25N60NF102 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , AON7506 , STU609S , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N .

Keywords - FCP13N60N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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