FCP13N60N. Аналоги и основные параметры
Наименование производителя: FCP13N60N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 116 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.258 Ohm
Тип корпуса: TO220
Аналог (замена) для FCP13N60N
- подборⓘ MOSFET транзистора по параметрам
FCP13N60N даташит
fcp13n60n fcpf13n60nt.pdf
August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based
fcp13n60n fcpf13n60nt.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp13n60n.pdf
isc N-Channel MOSFET Transistor FCP13N60N FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
fcp130n60.pdf
September 2014 FCP130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC) and
Другие MOSFET... FCI25N60NF102 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , AON7506 , STU609S , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N .
History: IXFH12N100P | STU616S
History: IXFH12N100P | STU616S
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