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FCP13N60N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCP13N60N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 116 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30.4 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.258 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FCP13N60N

 

 

FCP13N60N Datasheet (PDF)

 ..1. Size:898K  fairchild semi
 fcp13n60n fcpf13n60nt.pdf

FCP13N60N FCP13N60N

August 2009SupreMOSTMFCP13N60N / FCPF13N60NTN-Channel MOSFET 600V, 13A, 0.258Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC)process that differentiates it from preceding multi-epi based

 ..2. Size:785K  onsemi
 fcp13n60n fcpf13n60nt.pdf

FCP13N60N FCP13N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
 fcp13n60n.pdf

FCP13N60N FCP13N60N

isc N-Channel MOSFET Transistor FCP13N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.1. Size:1218K  fairchild semi
 fcp130n60.pdf

FCP13N60N FCP13N60N

September 2014FCP130N60N-Channel SuperFET II MOSFET600 V, 28 A, 130 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC)and

 9.2. Size:489K  onsemi
 fcp130n60.pdf

FCP13N60N FCP13N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:257K  inchange semiconductor
 fcp130n60.pdf

FCP13N60N FCP13N60N

isc N-Channel MOSFET Transistor FCP130N60FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Другие MOSFET... FCI25N60NF102 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , IRFZ24N , STU609S , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N .

 

 
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