1812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 1812
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 19.8 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.073 Ohm
   Paquete / Cubierta: TO252

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1812 Datasheet (PDF)

..1. Size:847K cn vbsemi
1812.pdf

2SK2925www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor

0.1. Size:250K rohm
2sa1812 2sa1727 2sa1776.pdf

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

0.2. Size:27K rohm
2sa1812.pdf

Transistors 2SA1812 / 2SA1727 / 2SA1776(96-609-A313)320

0.3. Size:471K freescale
mrf7s18125ah.pdf

Document Number: MRF7S18125AHFreescale SemiconductorRev. 0, 11/2008Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF7S18125AHR3Designed for GSM and GSM EDGE base station applications withMRF7S18125AHSR3frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C forall typical cellular base station modulations.GSM Applic

0.4. Size:409K freescale
mrf8s18120h.pdf

Document Number: MRF8S18120HFreescale SemiconductorRev. 1, 10/2010Technical DataRF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsMRF8S18120HR3Designed for GSM and GSM EDGE base station applications with frequen-MRF8S18120HSR3cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for alltypical cellular base station modulation formats.

0.5. Size:1133K kexin
2sa1812.pdf

SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V

0.6. Size:380K ncepower
nce30np1812k.pdf

NCE30NP1812Khttp://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A

0.7. Size:928K ncepower
nce30np1812g.pdf

http://www.ncepower.comNCE30NP1812GNCE N-Channel and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30NP1812G uses advanced trench technology toprovide excellent R and low gate charge.This device isDS(ON)suitable for use in inverter and other applications.Genera FeaturesN-channel P-channelSchematic diagram V = 30V,I = 18A V = -30V,I =- 12ADS D DS DR

0.8. Size:437K ncepower
nce30np1812q.pdf

http://www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A

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