1812 PDF and Equivalents Search

 ..1. Size:847K  cn vbsemi
 1812.pdf

2SK2925 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor ... See More ⇒

 0.1. Size:250K  rohm
 2sa1812 2sa1727 2sa1776.pdf

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Paramete... See More ⇒

 0.2. Size:27K  rohm
 2sa1812.pdf

Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 ... See More ⇒

 0.3. Size:471K  freescale
 mrf7s18125ah.pdf

Document Number MRF7S18125AH Freescale Semiconductor Rev. 0, 11/2008 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S18125AHR3 Designed for GSM and GSM EDGE base station applications with MRF7S18125AHSR3 frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Applic... See More ⇒

 0.4. Size:409K  freescale
 mrf8s18120h.pdf

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 0.5. Size:1133K  kexin
 2sa1812.pdf

SMD Type Transistors PNP Transistors 2SA1812 1.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf 1us at IC =-100mA. 0.42 0.1 0.46 0.1 High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V... See More ⇒

 0.6. Size:380K  ncepower
 nce30np1812k.pdf

NCE30NP1812K http //www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =30V,ID =18A... See More ⇒

 0.7. Size:928K  ncepower
 nce30np1812g.pdf

http //www.ncepower.com NCE30NP1812G NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812G uses advanced trench technology to provide excellent R and low gate charge.This device is DS(ON) suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram V = 30V,I = 18A V = -30V,I =- 12A DS D DS D R ... See More ⇒

 0.8. Size:437K  ncepower
 nce30np1812q.pdf

http //www.ncepower.com NCE30NP1812Q NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE30NP1812Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features N-channel P-channel Schematic diagram VDS = 30V,ID = 18A VDS = -30V,ID =- 12A ... See More ⇒