AFN4172WSS8 Todos los transistores

 

AFN4172WSS8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4172WSS8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 typ Ohm

Encapsulados: SO8

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AFN4172WSS8 datasheet

 ..1. Size:2313K  cn vbsemi
 afn4172wss8.pdf pdf_icon

AFN4172WSS8

AFN4172WSS8 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc

 5.1. Size:571K  alfa-mos
 afn4172ws.pdf pdf_icon

AFN4172WSS8

AFN4172WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:571K  alfa-mos
 afn4172s.pdf pdf_icon

AFN4172WSS8

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:481K  alfa-mos
 afn4134.pdf pdf_icon

AFN4172WSS8

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

MOSTRAR MÁS

Otros transistores... 30N06-TO252 , 30N20 , 30P06 , 70N06L-TQ2 , 80N10 , AF2301PWL , AF4502CSLA , AFN3404S23RG , TK10A60D , AFP2307AS23 , AM20P06-135 , AM2319P-T1 , AM2336N-T1 , AM2339P-T1 , AM2340NE-T1 , AM2358N-T1 , AM3401E3VR .

 

 

 

 

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