All MOSFET. AFN4172WSS8 Datasheet

 

AFN4172WSS8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN4172WSS8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ) Ohm
   Package: SO8

 AFN4172WSS8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN4172WSS8 Datasheet (PDF)

 ..1. Size:2313K  cn vbsemi
 afn4172wss8.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172WSS8www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

 5.1. Size:571K  alfa-mos
 afn4172ws.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:571K  alfa-mos
 afn4172s.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:481K  alfa-mos
 afn4134.pdf

AFN4172WSS8 AFN4172WSS8

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:481K  alfa-mos
 afn4134w.pdf

AFN4172WSS8 AFN4172WSS8

AFN4134W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:504K  alfa-mos
 afn4102w.pdf

AFN4172WSS8 AFN4172WSS8

AFN4102W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=175m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

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