Справочник MOSFET. AFN4172WSS8

 

AFN4172WSS8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFN4172WSS8
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 15 nC
   Время нарастания (tr): 12 ns
   Выходная емкость (Cd): 165 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.008(typ) Ohm
   Тип корпуса: SO8

 Аналог (замена) для AFN4172WSS8

 

 

AFN4172WSS8 Datasheet (PDF)

 ..1. Size:2313K  cn vbsemi
 afn4172wss8.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172WSS8www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc

 5.1. Size:571K  alfa-mos
 afn4172ws.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172WS, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:571K  alfa-mos
 afn4172s.pdf

AFN4172WSS8 AFN4172WSS8

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:481K  alfa-mos
 afn4134.pdf

AFN4172WSS8 AFN4172WSS8

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:481K  alfa-mos
 afn4134w.pdf

AFN4172WSS8 AFN4172WSS8

AFN4134W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:504K  alfa-mos
 afn4102w.pdf

AFN4172WSS8 AFN4172WSS8

AFN4102W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=175m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

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